One-Dimensional Semiconductor Nano-Materials And Study Of Their Electronic/Optoelectronic Devices

This thesis systemically investigates the synthesis of one-dimensional semiconductor nano-materials and the fabrication of related Si-based electronic/optoelectronic devices. The main achievements are as follows:1. ZnTe and GaN single-crystalline nanowires have been successfully synthesized via a simple vapor transport method. The ZnTe nanowires obtained using such method are firstly reported. Optical properties of these ZnTe nanowires were investigated by room-temperature Raman scattering spectrum and temperature-dependent photoluminescence measurements. The results show that the as-prepared ZnTe nanowires are of high crystal quality.2. The Cu-doped ZnTe and heavily Si-doped GaN nanowires were obtained using post-growth Cu(NO3)2 solution doping and in-situ Si doping methods, respectively. Er-doped GaN nanowires were synthesized, the infrared emission with wavelength of 1.54μm was obtained from the photoluminescence measurement on single Er-doped GaN nanowire. In addition, we have introduced a method for analyzing the shallow dopants in semiconductor nanowires by measuring the activation energy.3. ZnTe and GaN single nanowire field-effect transistors have been fabricated. The electrical measurements indicate that the ZnTe and GaN nanowires are p and n type, respectively. The study of electrical properties of single ZnTe nanowire is firstly reported. The main electrical parameters of these nanowires are deduced from the measurement results. In addition, the Si nano-FETs were fabricated using ZnO nanowires as the mask during dry etching process.4. The single nanowire/Si heterojunction electroluminescence devices have been fabricated. A sharp 382 nm ultraviolet electroluminescence from single ZnO nanowire is obtained. Intense green light can be observed emitting by naked eyes from the n-CdS nanobelt/p+-Si heterostructure. In the n-GaN/p+-Si heterostructure, the 390 nm GaN near band-edge donor-acceptor-pair transitions and the 670 nm emission from the luminescence centers located in the native Si oxide layer on the p+-Si substrates were observed and discussed.