Research Of Key Techonologies For Ultra-High-Speed, Radio Frequency And Microwave Monolithcally Integrated Circuits Design

Modern communication technologies have been developing rapidly. An information infrastructure, also called information highway, has been built for the requirements of many kinds of communication services. At present, optic-fiber transmission networks have become the backbone of the infrastructure. With the development of DWDM technologies, the data capativity of transmission channels has been increased over Tb/s. On the side of access networks, wireless communication has been found more and more applications because of its characterization of facility. It has been recognized by industry that wireless is the main trend of modern communications. Especially, the introduction and development of wireless LAN accelerates this trend. In a word, modern communication advances in the direction of ultra-high-speed and ultra-wideband.The rapid development of information industry brings forward higher requirements on ASICs for communications. Based on this background, this work focuses on the design technologies of key ICs in three regions: ultra-high-speed, radio-frequency and micro- and millimeter-wave.For the design of ultra-high-speed ICs, several key chips of optic-fiber transmitters, laser/modulator driver, are presented. A novel circuit structure is proposed to improve the performance of the driver. Using 0.35μm, 0.25μm CMOS and 0.2μm GaAs PHEMT technologies, three types of chips, including a 2.5 Gb/s laser/modulator driver for SDH STM-16 application, a 3.125 Gb/s×12 channels VCSEL driver array for OIF VSR-4 and VSR-5, and a 40 Gb/s laser/modulator driver for SDH STM-256 application are designed and realized, respectively.For the design of RF ICs, the core circuit, a voltage controlled oscillator (VCO), is presented. On the basis of phase noise analysis, the passive devices including inductors and varactors in the VCO and thecircuit structure are optimized. Using 0.18μm CMOS technology, a 5 GHz VCO is fabricated. The VCO operates on a 1.8 V supply with tuning range of 31%. The phase noise at 1 MHz offset is–117.2 dBc/Hz at the frequency of 4.12 GHz, a supply voltage of 1.6 V, and core power dissipation of 3.84 mW. The feasibility of this VCO for WLAN transceiver (IEEE 802.11a) is demonstrated.For the design of micro and millimeter-wave ICs, a distributed amplifier is presented. Modeling of transmission line, traditional circuit and improved circuit are analyzed. Based on CAD tools and the device library of 0.15μm GaAs PHEMT, the measurement results show that an average gain of 14 dB with 30 GHz bandwidth or 150 GHz gain-bandwidth product can be achieved. It can be used in a 40-60 Gb/s optic-fiber transimission system or a millimeterwave system.