| This thesis investigates GaAs monolithic microwave integrated circuit (MMIC) broadband amplification for potential use in optical modulator driver applications. Two types of distributed amplifiers (DA) are designed and evaluated: one having a conventional topology with cascode gain cells and the other having a matrix topology with common source gain cells. A number of design techniques are utilized in the amplifiers to obtain a high and flat gain as well as a wide bandwidth. These include frequency dependent terminations for the artificial transmission lines, loss compensation by adjusting the negative resistance of the gain cell, and series feedback of the transistors using inductive elements.; A 0.5--53 GHz, 5 stage, cascode distributed amplifier based on 0.2 mum GaAs pHEMT technology is designed, fabricated and measured, while a 0.5--41 GHz, 2 x 5 stage, matrix distributed amplifier based on the same process is designed and fabricated. Experimental and simulated results are found to be in close agreement.; It is concluded that the conventional topology cascode DA design can provide maximum bandwidth but with limited output voltage swing, whereas the matrix DA topology has the capability of producing larger output voltage swings. |
