Study Of Novel Structural SOI Materials (SGOI,SODI)& Related Technology

The density of devices fabricated on a single silicon chip has been increasing exponentially over the past three decades roughly following Moore's law, however, current integrated circuit (IC) designs are quickly approaching their physical limits as nano-scale devices era looms. Strained Si technology, SOI (Silicon-on-lnsulator) technology and high K dielectric materials which are hatched from the tremendous success of today's IC industry can provide some of the solutions in the sub-100-nm technology node.Under the above backgrounds, the works in this thesis focus on: (1 )Epitaxy of pseuodomorphic SiGe thin film on ultra-thin SOI which is used as a compliant substrate and characterization of the obtained SiGe, then investigating the strain relaxation in the SiGe layer after annealing process. (2) Fabricating SGOI novel structure with modified Ge condensation technology, then characterizing the SGOI structure and exploring the mechanism during the SGOI fabrication. (3) Epitaxy of strained Si on the obtained SGOI substrate. (4) Comparison of the thermal stability of exposed and buried diamond-like-carbon (DLC), then investigating the mechanism of the enhanced thermal stability in buried status and finding the possibility of silicon-on-diamond (SOD) application which used DLC as buried insulator instead of silicon dioxide. (5)Using Smart-Cut technology, a silicon-on-SiO₂/DLC dual insulator (S0DI) structure has been successfully formed. (6)Studying a series of gate dielectric including Zr_0.6Al_0.4O_1.8, Al₂O₃/ZrO₂/Al₂O₃ and Al₂O₃, on SiGe or SGOI substrate to introduce high K materials into the field of SiGe based microelectronic device. The main results are summarized in the following: 1) Using ultra-high vacuum chemical vapor deposition (UHVCVD), highquality pseuodomorphic SiGe thin film has been successfully grown on a...