Electrical Properties Of High-k Gate Dielectric SiGe MOS Devices

As the continual scaling of complementary metal-oxide-semiconductor (CMOS), Si MOS device approaches its fundamental limits, and new channel materials the strained SiGe material possesses such qualities as: high hole mobility, wide range of suffering temperature, good heat conductibility and low leakage current etc, which enable it to become an ideal material used for the production of ultra-small-scale, highly-integrated circuits which own high frequency and low noisy. Recently, study on SiGe or Ge MOSFETs with high-κgate dielectric have become hot point, which mainly be focused on fabrication processes and electrical properties of high-κgate dielectric.The mobility of SiGe MOSFET was studied in this essay. Considering the strain-effect on Si1-xGe according to device physics, a low-filed hole mobility model is founded. The model is fitted as the function of components of Ge ini_1-xGe_x alloy, in which the coulomb scattering of the trapped charges and ionized doping is revised because of the different screen-effect that mobile carriers play on them. By the model, the variation of hole mobility with strain is simulated and the influences of some parameters on mobility are analyzed and discussed for device-optimizing. In this work, the samples of High-k Gate Dielectric SiGe MOS device are made and tested. The influences to the interface properties of the Ge MOS capacitance with HfTiON Gate Dielectric generated by the wet N2 PDA and dry N2 PDA are compared as followed. How the Ti concentration influence on the electricity properties of HfTiO Gate Dielectric Ge MOSFET are discussed also. The different electrical properties of the different Ge MOS capacitance samples with different gate dielectric of HfO2 ,HfTiON and HfTiO are compared, the merits of each kind materials and application foreground are also discussed. Further more, the data collection and processing of the high frequency C-V measuring device are studied. The programming of data collection interface is complished . Meanwhile, this article has accomplished the PCB designing of the high frequency C-V measuring device with the help of soft Protel DXP.