| In the post 5G era,emerging concepts such as the integration of communication perception,the interconnection of everything,and the metauniverse have become the ultimate form of mobile communication,requiring the support of technologies such as ultra-high capacity data transmission,short-range high-speed transmission,small-scale communication,and imaging.This means that the ideal demand for mobile communications in the future has moved towards terabit high-speed links and global network coverage.The range of the terahertz frequency band is 0.1 terahertz 10 THz,which is between the microwave and infrared frequency bands.It is a transition region connecting optics and electronics.It not only has the penetrability and absorbability of the microwave frequency band,but also has the spectral resolution characteristics of the optical frequency band,and has a huge application space in the communication field.Phased array technology can effectively improve the quality,speed,and capacity of communication,which is of great significance for the development of terahertz communication.However,limited by the current technological level and bottlenecks in technological development,current silicon based terahertz phased array transceivers still face many problems in terms of frequency,bandwidth,and power consumption that need to be addressed.In this thesis,the amplitude control module in silicon based terahertz phased array systems has been deeply studied,and many effective solutions have been proposed.A silicon based terahertz chip has been successfully developed,verifying the effectiveness of relevant technical routes.In response to the difficult design problem of W-band variable gain amplifiers,this thesis considers the need for low-cost and high integration in phased array systems.During the design process,the mechanism of additional phase shifts generated by common source and common gate amplifiers is analyzed,and a phase compensation technique based on the Cds capacitance compensation theory is proposed.Based on this theory,a single stage variable gain amplifier operating in the W-band is implemented,with a peak gain of 8.7d B,It has a 3 d B bandwidth of 27 GHz and a DC power consumption of 23.6 m W.The additional phase shift is less than 3°within the bandwidth range of 73 ～103 GHz.This design simultaneously achieves low phase change,high-precision stepping,and ultra-low phase error during gain adjustment,and meets the requirements of low power consumption and high integration.It is very suitable for the application of 5G millimeter wave phased arrays.In response to the design challenges of terahertz broadband variable gain amplifiers,this thesis focuses on the key factors that cause additional phase shifts in silicon based terahertz variable gain amplifiers,analyzes the mechanism by which gate decoupling capacitance affects additional phase shift sensitivity,and explains the trade off design issues between maximum gain and additional phase shifts.Finally,a phase compensation technique based on embedded inductor networks and a multistage phase compensation technique based on staggered tuning theory were proposed.Based on this theory,a D-band broadband low additional phase shift variable gain amplifier chip was designed and developed,which achieved a gain adjustment range of 10.1 d B and a gain step of 0.6 d B in the148 ～170 GHz range; Additional phase shift across the entire band < 4°.The proposed circuit architecture and technical route can simultaneously take into account the low additional phase shift,high precision gain stepping,and gain adjustment range during gain adjustment in broadband application scenarios.It plays a positive role in improving the performance of amplitude control modules in silicon based phased array systems,and is highly competitive in the design of similar variable gain amplifiers. |
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