Research On Terahertz Bidirectional Amplifier Design Techniques In CMOS Technology

Terahertz,as the inevitable operating band for next-generation mobile communication technology,is properly suitable for the application scenarios such as large connection and Multi-user real-time communication due to the characteristics of the rich spectrum resources and the high-speed data transmission capabilities.Thus,the terahertz wireless communication technology has won great attention.However,the free-space path losses will be high when the operating frequency of a wireless communication system rises to terahertz.In order to guarantee the good communication quality,the phased array technology is adopted in the terahertz wireless communication systems,moreover,the high-performance RF front-end devices based on compound semiconductor(III-V)technology are necessary.However,to realize large-scale commercialization of the terahertz wireless communication systems,the production cost of communication equipment must be constrained.In order to reduce costs,on the one hand,a novel transceiver architecture based on a bidirectional amplifier can be used in terahertz phased array to reduce the number of RF modules.On the other hand,the low-cost,high-integration silicon technology can be selected to design RF front-end devices.Therefore,it is highly significant for the commercialization of the terahertz wireless communication technology to design high-performance terahertz bidirectional amplifier using silicon-based technology.This thesis focuses on the key technologies of silicon-based terahertz bidirectional amplifiers.First,the published articles on bidirectional amplifiers are investigated,and the bidirectional amplifier topologies are summarized and classified,further more,the operating mechanism of bidirectional amplifiers is emphatically analyzed.Then the main performance characteristics of the amplifier and their significance are introduced.Based on the above theoretical basis,the two terahertz amplifiers were designed for wide bandwidth and high gain,respectively.Finally,a novel terahertz bidirectional amplifier topology is proposed.And several high-performance amplifier designs and significant technological breakthroughs are completed.To meet the requirement of wide band,an 85-121 GHz wideband amplifier with novel feedback networks is designed in a 0.13-?m SiGe BiCMOS technology with nominal f_T of 200 GHz.And the amplifier realizes a flat gain of 13.1±0.5 dB from 90 to115 GHz.To meet the requirement of high gain,a 200 GHz high-gain amplifier with novel stacked common gate topology is designed in a 55-nm CMOS technology with nominal f_T of 204.3 GHz.And the amplifier realizes a high gain of 21.6 dB at 200 GHz.For the next generation of terrestrial wireless communication applications,a bidirectional amplifier with the operating frequency of 120 GHz is introduced based on the 55-nm CMOS technology.In RX mode,the bidirectional amplifier achieves a high gain of 26.0 dB,the noise figure is 7.6 dB and the reverse isolation is beyond 70 dB.In TX mode,the bidirectional amplifier features a gain of 18.0 dB and the reverse isolation is beyond 60 dB.