| With the rapid development of technologies such as 5G,AI,cloud computing,and big data,new infrastructure represented by 5G networks,industrial interoperability,and the Internet of Things will drive the rapid growth of the semiconductor industry.Nowadays,semiconductor materials have developed into the third generation of wide bandgap semiconductor materials based on silicon carbide and gallium nitride.Based on the development of semiconductor materials,RF,microwave and millimeter wave technologies have also developed at an unprecedented speed,and the demand for monolithic microwave integrated circuit(MMIC)chips is also increasing.RF circuit wireless communication systems are also expanding the working signal band in electronic information and phased array radar applications,which is based on the changes brought about by the increase in the intrinsic frequency of semiconductors.The widening of the working band,while increasing the data transmission rate,can make wireless devices compatible with more communication standards and protocols.Therefore,the development of ultra-wideband technology has become an important direction of research.Ultra-wideband technology has the advantages of high spatial resolution,small multipath fading,strong anti-interference ability,and low equivalent power consumption,and can be used in wireless communication systems to enhance the strength of electronic information countermeasures,phased array radar,and other military fields.In today’s world of scientific and technological information warfare,the importance of highly integrated chip-on-chip chips is becoming more and more prominent,and it can be seen from the fact that 5G SOC(system on chip)chips have been greatly hindered by foreign sanctions in recent years,and domestic development has been greatly hindered.The development of active phased array radar technology plays an important role in improving national military strength.With the advanced process of chips,the development of MMIC is also developing in the direction of the higher frequency band,multi-function,high integration,high performance,low power consumption,and small size.The T/R(Transmit/Receive)component is an important part of a phased array radar system and plays a decisive role in its overall performance.In today’s increasingly complex electromagnetic environment,electronic strikes,and electronic jamming challenges,the RF module design of phased array radar T/R module modules has a long way to go.According to different application scenarios,the semiconductor materials and processes used are also quite different.With the continuous development of silicon-based process semiconductor technology,the advanced process reduces the size of transistor devices,increases their intrinsic operating frequency,makes the use of frequency bands wider,and various frequency band T/R components using silicon-based processes are also widely used.This time,for the T/R module,a domestic CMOS 55 nm process was used to design an ultra-wideband 6-18 GHz amplitude and phase control chip receiving link system.The focus was on the design of specific modules such as low noise amplifiers and balun,as well as the design of the entire receiving link system.The system was successfully taped and tested.The chip size is 4.6mm*1.00 mm,and the test results show that the working voltage is 1.2V,the current is 114 m A,the working frequency is6-18 GHz,the gain is 22.8±2.2 d B,the noise figure is 4.2～7.2 d B,the input P1 d B is-20.80 d Bm,and the output P1 d B is-0.6d Bm;The attenuation range of VGA is0～31.5d B,the minimum attenuation step is 0.3d B,the error of attenuation additional phase modulation is large at the maximum attenuation bit,and the rest of the attenuation bit is ±6°;The phase shifter has a phase shift range of 360°,a minimum phase shift step of 5.625°,phase-shifting additional amplitude modulation of less than 1.1d B,and a phase-shifting error RMS of less than 3.1°. |
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