Research And Design On Silicon-based Millimeter-wave Integrated Amplitude-phase Control Circuits

Mm-wave frequency bands typically have larger bandwidth,lower latency,and faster data transfer speeds.The silicon-based mm-wave phased array T/R front-end has the advantages of low cost,miniaturization and high integration,and it broadens application prospects in the fields of mm-wave radar,5G communication and satellite communication.The amplitude and phase control circuit directly determines the performance of the phased array system such as beamforming and gain control.In this thesis,the research on the key technology of the amplitude and phase control circuit is carried out for Ka-band(32-38GHz)phased arrays.On the basis of introducing the basic principle and common structure of the attenuator,this thesis firstly focuses on the research and design of Ka-band 5-bit the attenuator.The 1d B/2d B units adopt a modified distributed attenuator,while the 4d B/8d B/16d B units adopt a switched attenuator.The hybrid attenuation structure not only ensures the accuracy of the attenuation step,but also saves the area of the overall chip.An inductive phase correction network is utilized to reduce the phase difference.In order to improve the inter-stage matching of different types of attenuation units,small inductors are used for better isolation.For the switching transistor of the attenuator,a floating gate technique is used to improve its linearity performance.The attenuator is implemented in a 0.13-μm Bi CMOS technology.The measured results show that the bandwidth is 28-40GHz.The root mean square(RMS)amplitude error is from 0.27d B to0.43d B,and the RMS phase error is from 1.4°to 5.4°.The core area is around 0.21mm~2.Next,a Ka-band 6-bit phase shifter is proposed by utilizing the active vector modulation.The phase shifter utilizes Marchand balun and all-pass filter to generate quadrature signals.A pole splitting technique is proposed to improve the bandwidth.The vector modulator consists of two variable gain amplifiers which are based on Gilbert cells.Finally,the differential signal is converted to a single-ended output through the Marchand balun.The phase shifter is designed in a 0.13-μm Bi CMOS technology.The simulated result shows that the 3d B bandwidth is 29-40GHz with TT,FF,and SS corners.The RMS amplitude and phase errors are less than 0.75d B and 4.5°,respectively.The noise figure is less than 15.4d B in the frequency range of 29-40GHz,and the total power consumption is 24.5 m W...