Research And Implementation Of High Power IGBT Driving Circuit

Insulated Gate Bipolar Transistor(IGBT)has been widely used in rail traction,new energy generation,smart grid and defense industry.High-power IGBT usually refers to the voltage class in a few hundred volts,current class in a few hundred amps above the IGBT.The driving circuit of IGBT plays an important role in the safe operation of IGBT,because the IGBT working conditions for large current,large voltage,high heating and other bad conditions,there are easy to overvoltage breakdown,overcurrent burn and other problems.The high-power IGBT studied in this paper is mainly applied in the field of electric drive of new energy vehicles.It is mainly aimed at the problems such as the difficulty of protection in the operation of IGBT and the problems such as over-voltage and over-loss efficiency.Combined with the research hotspots in recent years,the working mechanism and driving circuit of high-power IGBT are studied.And a new type of driver chip AFCJ-3439 T is used to design the high power IGBT driver circuit.The experimental results show that the designed high-power IGBT driving circuit can make the IGBT run safely for a long time and solve the problems existing in the current application process of IGBT well.This paper focuses on the development status and trend of IGBT devices and their driving technologies,analyzes the structure,working mechanism,driving technology and failure mechanism of high-power IGBT,and focuses on a common latch failure mode of IGBT,and introduces in detail two modes of latch: static latch and dynamic latch.The specific requirements of various parameters in IGBT drive circuit and the common forms of drive circuit are studied.The existing problems of current IGBT drive circuit are analyzed and an optimized circuit scheme is given.IGBT drive circuit and protection circuit are designed.After the completion of the circuit design,the IGBT driving circuit was tested in detail using IGBT double pulse experiment and short circuit experiment.The test results show that the designed driving circuit can drive the IGBT well,and can effectively protect the safe operation of IGBT,effectively solving the problems of IGBT such as easy overvoltage breakdown and overcurrent burning.