Design And Research Of Driving Circuit For Silicon Carbide MOSFET And Silicon IGBT

With the rapid development of electronic power technology,semiconductor technology and integrated circuit has played important roles in the fields of industry,medical treatment and education.In the semiconductor technology,power semiconductor devices have always been considered as a key component,while both Insulated gate bipolar transistor(IGBT)and silicon carbide MOSFET play an important role in the power devices.IGBT which integrates the performance characteristics of metal-oxide semiconductor field effect transistor(MOSFET)and bipolar transistor(BJT)has a series of advantages,such as high voltage,high current,high input impedance,fast switching speed,large driving power,good thermal stability and low on-state voltage.At the same time,compared with silicon-based MOSFETs,silicon carbide MOSFETs has lower onresistance and switching losses and high-temperature stability.it is more suitable for highfrequency fields and some high-temperature working scenarios.Considering the above advantages,IGBT and silicon carbide MOSFET are widely used in new energy power generation,rail transit,smart grid,automotive electronics and defense industry.At the same time,the driving circuit is an indispensable part in the application of IGBT and silicon carbide MOSFET,and the quality of the driver directly affects the efficiency,reliability and safety of the system.Although there are many driving circuits for IGBT and silicon carbide MOSFET at home and abroad,only a few foreign giant companies have related products of drivers that are suitable for both IGBT and silicon carbide MOSFET.In order to solve the above problems,this paper designs a driving circuit that can simultaneously drive IGBT and silicon carbide MOSFET.The main research contents are as follows:(1)Compare the basic structure,equivalent circuit,working principle,static characteristics,safe operating area and failure mechanism of ordinary silicon-based MOSFET,IGBT and silicon carbide MOSFET.Analyze the basic requirement of driving circuit about IGBT and silicon carbide MOSFET,then design a driving circuit which is suitable for both IGBT and silicon carbide MOSFET,the driving circuit includes the drive power circuit,drive transmission circuit and drive protection circuit;(2)According to the overall requirements of the driving circuit,design the drive transmission circuit to realize the functions of glitch suppression,signal isolation transmission,level conversion and power amplification,and design the protecting circuit to deal with overvoltage,overcurrent,undervoltage and overtemperature,design the drive power circuit to provide + 15 V /-5V gate voltage for the driver;(3)Carry out experimental simulation on the design of IGBT and silicon carbide MOSFET driving circuit,and build a high voltage test platform,to verify the feasibility of this design.