Failure Analysis Of IGBT Power Module Based On Double Pulse Test

Power semiconductor devices are the basic components that adjust the efficiency,size and cost of electronic systems,and have been widely used in various fields of electronic engineering.As a typical device in the field of modern power electronics,IGBT(Insulated Gate Bipolar Transistor)Since the advent of IGBT transistors in 1980,IGBT technology has developed rapidly.As the main power conversion equipment,it covers power electronic applications ranging from tens of watts to tens of megawatts.Its market capacity is far superior to traditional rectifiers.It has high vitality and development potential.This device is a new type of composite device,composed of BJT(bipolar transistor)and MOS(insulated gate field effect transistor),which solves the problem that the gate of the early high withstand voltage,high current,and high power device is not easy to control.It has the advantages of high switching speed and reduced saturation voltage.In addition,IGBT packaged power modules are also widely used in new energy vehicles,high-speed rails and airplanes.Therefore,it is very important to study the failure of IGBT power modules.First This article introduces the basic structure,packaging process and working principle of the IGBT power module,and then introduces the basic structure and working principle of the IGBT chip,focusing on its electrical characteristics,specific analysis of the static characteristics of power semiconductor devices,and further based on the IGBT module The pulse test deeply studies the failure mechanism.After grasping the overall research status at home and abroad,the dynamic characteristics of the IGBT are introduced through the influence of capacitance and resistance on the switching performance,and finally the safe operating area of the IGBT is introduced.Second Briefly summarize the basic principles and methods of IGBT module testing.According to the principle of IGBT power module testing,use the software Solidworks and Auto CAD to model and simulate the IGBT module test platform to build an experimental platform,and assemble it with various components and connect the circuit.Provide a test platform for further analysis of module failure.Research the failure of IGBT power module based on pulse test,read the test parameters of the IGBT module on the oscilloscope,and test the electrical performance of the module to preliminarily judge the failure mode of the module,and read the test waveform of the IGBT module on the oscilloscope.Finally Sum up a set of failure analysis procedures for studying IGBT power modules:including visual inspection of the failed module and comparison of the appearance and environment of the module before and after the failure,and then the comparison of the pulse waveform before and after the failure,etc.,and electrical testing of the module as a whole.And remove the external package to perform microscope inspection and electron scanning microscope inspection inside,locate the failure point,observe the chip with the electron scanning microscope,use the built test platform to restore the failure of the failed module,determine the failure mechanism,and comprehensively analyze and determine Propose corrective measures for failure reasons.Provide technical routes and improvement measures for future research on the failure of IGBT power modules,as well as how to avoid similar failure forms in applications,and study the correlation of different failures according to the failure forms and modes.This article mainly analyzes the avalanche breakdown,electron migration and bond wire failure of IGBT modules.