Research On The Characteristics Of Doped ZnO Memristor And Its Crossbar Arra

As a new type of non-volatile logic operation device,memristor can realize logic operation on the basis of large-scale cross array.In order to improve the performance of cross array,this paper studies the preparation of doped Zn O thin film,Zn O:Li,Zn O:Mn,Zn O:Cr and Zn O:V are selected as Zn O doped target.The effects of doping（Li,Mn,Cr and V）on the lattice structure and The effect of surface topography.Based on this,a memristor with a Pt/Ag/Zn O:X/Pt/Ti（X=Li,Mn,Cr,V）structure was prepared on a Si O₂/Si substrate,and the doping elements and elements of the resistive layer were analyzed.The influence of doping concentration and thickness on the characteristics of the memristor is given,and the optimized preparation conditions are given.On this basis,the memristive properties of doped Zn O are compared and analyzed,and the doped Zn O memristor with excellent characteristics is determined.Design and fabricate a doped Zn O memristor cross array based on a through-hole structure,and complete the PCB package.At room temperature,the experimental results show that the memristor prepared by4%Mn doped Zn O target exhibits good resistance characteristics,with a switching ratio of 10⁵,a Vset of about 0.5V,and a Vreset of about-1.5V.For the effective area of the resistive layer of 9μm²（3μm×3μm）,the switching ratio of the Zn O:Mn memristor array（3×3）can reach 10⁶,the Vset ranges from 0.5 to 0.8V,the Vreset ranges from-1.8 to-2.0V.