Research On Thermal Characteristic And Resistive Switching Mechanism Of Chalcogenide Memristor Consisting Of Ag

In recent years,memristor has received extensive attention and research.According to the current report,memristor has wide prospect in high density storage,nonlinear circuit,simulated neural network and combination of computing and storage since its simple structure,nonvolatile,fast switching speed,low power consumption and compatibility with existing COMS process.Verified conductive mechanism is the key to improve the device and make the memristor practical.The research of thermal characteristics plays an important role in the study of mechanism and thermal failure.What is more,the multi-level characteristic is the research hotspot for high density storage,nonlinear circuit and simulated neural network.The research of high-speed multi-level memristor and thermal characteristic is important for memristor research.In this study,two kinds of typical silver doping chalcogenide materials:AgGeTe and AgInSbTe were used to study the multi-level characteristics,pulse switching characteristics and thermal characteristics.The resistive switching mechanism of these device was researched.The main results of this paper are as follows:The resistive switching device of Ag/AgGeTe/Ta is fabricated by magnetron sputtering and photolithography.Resistance of the device can be tuned by controlling the current compliance.Each state can keep stable for more than 1800 s at the room temperature without degradation.The device can also control the state by applying 20 ns pulse with different amplitudes.After the cyclic switching,the device still has good impulse response characteristics.By analyzing the materials,the conductive mechanism of the device is established based on the combination of conductive filament and electron hopping mechanism.the device of Ag/AgInSbTe/Ta is studied.We find that the device has bipolar resistive switching characteristic.The voltage of SET and RESET process is low,as well as the power consumption.It can realize the gradual resistance tuning by controlling the applied voltage.The conductive mechanism of the device is established based on the combination of conductive filament and intrinsic space limited conduction(SCLC).The difference of the Ag/AgGeTe/Ta device and Ag/AgInSbTe/Ta device at different temperatures is analyzed.The resistive switching devices have different resistance values in the case of temperature rise,and the low resistance state has greater variation.The thermal failure occurs when the AgInSbTe device exceeds 110?.The performance of AgGeTe device is better than that of AgInSbTe device under variable temperature conditions...