Design Of Ultra-wide-band Low Noise Amplifier Based On The 0.18μm CMOS Technology

The ultra-wide-band (UWB) technology enables the data transmission at a rate up to several mega-bit per second within a short distance, making ultra-high-speed wireless data transmission possible. Although UWB standards are yet to be unified, low noise amplifier (LNA) with ultra-wide bandwidth is always an indispensable component.This paper studies the research status and significance of low-noise amplifiers. The basic knowledge of CMOS technology relevant to LNA design is also described. The third chapter discusses the low-noise amplifier design theory, including some basic knowledge of RF circuits, RF circuit impedance matching, and low noise amplifier structure and performance with some analysis. In the fourth chapter, we introduce some ultra-wideband circuit design methods, and then design two ultra-wideband low noise amplifiers realized in 0.18μm CMOS technology for wireless communication systems. The proposed circuits are designed and simulated in Cadence. Simulation found that the two ultra-wideband low noise amplifier input and output are to achieve good impedance matching, the input reflection coefficient S11 and output reflection coefficient S22 in the frequency range 3.1-10.6GHZ are less than-10dB, the noise coefficient in 4.3dB less. In the 3.1-10.6GHZ frequency range of two ultra-wideband low-noise amplifier gain was 12±1dB and 29±1dB, 1.8V operating voltage amplifier in the DC power consumption of about were 21.6mw and 37.44mw.