| With the development of the times,people’s requirements for mobile communication performance are gradually improving,and CMOS technology can not meet people’s needs for mobile communication.In the current mobile communication system,in order to make up for the limitations of a single CMOS process,engineers try to design different RF modules with different processes,so as to improve the performance of each module and finally integrate them into modules.Low Noise Amplifier(LNA)is an indispensable part of the RF system.Its noise plays a decisive role in the noise of the whole receiver.Therefore,the LNA design using a process with good noise performance will greatly improve the noise performance of the whole receiver link.The paper is based on 0.11μm SOI CMOS process,an LNA applied to RF receiver system is designed,and its working frequency is 3.3～4.2GHz.The power supply voltage of the LNA is 1.35～2V.In order to obtain better LNA performance,a Low Dropout(LDO)Linear Regulator is required to provide a stable power supply for the LNA.LNA adopts a common source common grid structure with source inductance negative feedback and resistance parallel negative feedback.In order to reduce noise,the input matching inductance of LNA adopts high-Q off-chip inductance,and the source negative feedback inductance adopts bonded wire inductance;At the same time,the output of the circuit adopts T-type matching network to improve the flatness of gain.This paper gives the circuit design,pre-simulation,layout design and post-simulation of LNA.According to the post-simulation results,when the power supply voltage is 1.35～2V,the power gain of LNA is greater than17.5d B,the noise figure is less than 0.9d B,the input 1d B compression point is greater than-20d Bm,the input return loss and output return loss are less than-8d B,the working current is less than 10m A,and the layout size is about 280*648μm~2。The LNA designed in this paper meets the design index requirements and can be applied to 5G RF front-end module. |
