Design Of 9.6～10.5GHz CMOS Phase Noise Voltage-controlled Oscillator

RF transceiver,as a device with the function of sending and receiving radio signals at the same time,has the function of receiver and transmitter,has a broad and indispensable role in the field of wireless communication.VCO（Voltage-controlled Oscillator）is a key module in RF transceiver chip,which directly determines the frequency tuning range of the frequency synthesizer.Its phase noise has a great influence on the phase noise of the frequency synthesizer,which directly affects the signal quality of the transceiver chip.In this thesis,a 9.6-10.5 GHz VCO for digital reconfigurable RF transceiver chip is designed using 22 nm RF CMOS technology.The VCO adopts class B harmonic oscillator structure and realizes active negative resistance through NMOS cross pair tube to meet the requirements of low voltage and high frequency.The frequency rough tuning and the coverage of frequency tuning range are realized by the 6 bit switching capacitor array.The accumulated varactor is used to fine-tune the frequency and prevent the K_VCOfrom being too large.Through the tail current source tube to ensure the circuit offset stability and increase the output swing appropriately to reduce phase noise;a two-stage self-biased inverter is used as the output buffer to isolate the load under low power consumption.The phase noise performance can be improved by optimizing inductance and device parameters.The paper completed the circuit design,pre-simulation,layout design and road-field hybrid simulation.The simulation results show that with 1V power supply voltage,under the combination of TT/FF/SS and-40/27/85℃temperature,the VCO operating frequency covers 9.6～10.5GHz,and the K_VCOis less than 210 MHz/V.Phase noise is less than-91.2 dBc/Hz@100kHz and-115.77 dBc/Hz@1MHz,and the operating current of the core circuit is less than 19.03mA.The VCO designed in this thesis has good performance and can be used in digital reconfigurable radio frequency transceiver chips.