Research And Design Of Ultra Wide Band And Reconfigurable Power Amplifier

With the development of wireless communication technology,the role of modern radio subsystems in the military and civilian fields has become more and more important,and the demand for its integration and reconfiguration is expanding.As an important part of the radio subsystem,the power amplifier still cannot meet the flexible military and civilian needs,so the development of new multi-mode and multi-band reconfigurable power amplifiers has become a future research goal.It can be seen that the research on ultra-wideband reconfigurable power amplifier technology is of great importance.The distributed structure has obvious advantages in realizing ultra-wideband performance,but other parameters are limited,and the development encounters a bottleneck.A lot of research and experiments have been carried out to address these issues in the thesis.The main works are as follows:(1)Aiming at the bottleneck of distributed structure,a reconfigurable inductance is introduced on the basis of non-uniform distributed structure,and a distributed reconfigurable structure is proposed.Through theoretical analysis and simulations,it can be seen that this structure is suitable for widening the frequency band,optimizing the matching,improving the efficiency,and solving the self-resonance problem of on-chip inductance.It theoretically has better performance than the traditional structure.At the theoretical level,the advanced nature of the distributed reconfigurable scheme is proved.(2)Based on the 0.15?m Ga As p HEMT process,a 0.8-18GHz ultra-wideband reconfigurable power amplifier chip was designed using a distributed reconfigurable scheme.The test results show that the reconfigurable function of the power amplifier is normal.The amplifier achieves a gain of 10d B in the working frequency band,S₁₁ and S₂₂ are both less than-10d B,and achieves a saturated output power of 20.2?21.6d Bm and an OP_{1d B} of 16.0?19.2d Bm when the total gate width is only 0.31mm.The PAE performance of the power amplifier is 20.1?34.2%,PAE of the full frequency band is greater than 20%,and the average PAE reaches 26%.The chip size is 2.36mm×1.70mm.It can be seen that the power amplifier has achieved excellent performance,which proves the feasibility and advancement of distributed reconfigurable scheme in low-power application scenarios.(3)Based on the 0.25?m Ga N HEMT process,a 2?18GHz ultra-wideband reconfigurable power amplifier chip was designed using an improved distributed reconfigurable scheme.The simulation results show that the power amplifier achieves a small-signal gain of more than 11d B,a saturated large-signal gain of more than 6.5d B and a good large-signal matching performance in the working frequency band,the saturated output power is greater than 37d Bm,the PAE is greater than 27%,and most of them remain above 30%,the average PAE is greater than 32%,and the chip size is3.76mm×2.33mm.The power amplifier achieves excellent large-signal performance,proving the feasibility and advancement of the distributed reconfigurable structure in high-power application scenarios.The research on the distributed reconfigurable scheme and the successful design of two different process chips respectively prove the effectiveness and advancement of the scheme from different levels,and provide a feasible direction for the design of ultra-wideband reconfigurable power amplifiers.