Research On Ultra-Wideband RF Amplifier Integrated Circuit Design And Implementation

Ultra-wideband?UWB?wireless communication systems use ultra-wide bandwidth to transmit data at high bit rates,and the system's operating frequency band can cover multiple wireless standards.Through the development of wireless communication technology,the performance requirements of radio frequency transceiver components in wireless communication systems have also been continuously improved.The power amplifier is one of the important modules in the RF transceiver.As the end module of the inverter,it amplifies the RF signal.The amplified signal will propagate through the antenna in the form of electromagnetic waves and is finally received by the receiver.Good or bad determines the distance that the RF signal travels.Ultra-wideband RF amplifiers are gradually becoming research hotspots because of their ultra-wide operating bandwidth,size,and high integration.To tackle the above problems,this thesis systematically learned the relevant theoretical knowledge of RF power amplifiers,and studied the types and research status of ultra-wideband amplifiers.After learning about the classic wideband amplifiers in the study,this thesis deeply studied the theoretical basis of the discrete amplifiers and explored the design methods of distributed amplifiers.By analyzing different new distributed amplifier topologies and based on different performance index requirements,two suitable distributed topologies are selected here to design two decentralized amplifiers based on the quantized gallium process.This thesis's first design covers a domestic 5G DC-6GHz discrete amplifier for 5G communications.The specifications require 6GHz operating bandwidth,1W output power,and high gain offset.The amplifier is designed based on the GaAs PP25-21process.It uses a 5-stage cascode distribution,and a reasonable compromise between the operating deviation and the output power is achieved through a reasonable choice of transistor size and voltage.At the same time,due to the need to expand bandwidth,innovatively introduced gate polarization technology;in order to obtain a higher gain compensation and the best good gain mixing considerations,the neutralizing inductor is dated;in addition,the m-type matching is used to change the phase speed to enable the output signals are superimposed in phase.The distributed amplifier has passed assembly testing.The small signal gain is up to 15dB,the P_1dB at 3GHz reaches 31dBm,and the PAE of the amplifier is as high as 31%.In this thesis,another DC-30GHz distributed amplifier is designed for mm-wave applications.The absolute length of the discrete amplifier is increased by 5 times.The distributed amplifier is based on GaAs PP15-51 process and designed with 8-stage cascode distributed amplifier distortion.The amplifier therefore chooses a smaller size transistor to obtain a higher predetermined frequency.Similarly,the unit gain structure adds inversion technology and neutralizing inductance.In addition,compared with spiral inductors and rectangular inductors,the simulation results of the amplifier with two layers:small signal gain S21 is about 14dB,the average input and output return loss are better than 10dB at the operating wavelength,and P_1dB is allowed to reach 30dBm.