| Power electronics technology is one of the key technologies for modern science,industry and national defense,and the power electronics devices is the most important component for the power electronics technology.The Dynamic parameters of power electronics devices are important specifications to evaluate their performance,and the next generation of wide band gap semiconductor devices,such as SiC devices,are more sensitive to parasitic parameters of the test circuit due to the fast switching transient.Therefore,the test method and dedicated test platform that meets the requirements of fast switching transient of high voltage SiC devices are very important to evaluate the performance of the SiC devices.In order to study the dynamic parameters testing technology of high-voltage SiC MOSFET devices with fast switching transient and extract the dynamic parameters accurately,this paper first studies the relevant factors that may affect the dynamic parameter testing of SiC devices,such as circuit parasitic inductance,measure system bandwidth,test methods of voltage and current,reliability of gate driver and delay calibration.Based on the study,the design considerations of the key components are presented,the laminated busbar is adopted to minimize the test circuit parasitic inductance.With the proper designed gate driver circuit for SiC MOSFET module,necessary auxiliary circuit,and the proper selection of test equipment,the hardware of dynamic parameters test platform for high voltage SiC MOSFET module is built.At the same time,a software using LabVIEW is designed and programmed for the test platform to realize the automatic test control,data processing,results display and user interface.Finally,combining the two parts of the hardware and software systems,a6.5k V / 400 A SiC MOSFET module dynamic parameter test platform was completed.The function,feasibility and accuracy of the test platform system was verified based on the experimental test results. |
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