Research Of High Voltage High Power IGBT Test Technology And Test Platform

Power electronic device is the base of Power electronic technology and decide the development and application level of power electronic equipment. In all of the power semiconductor devices, IGBT is undoubtedly one of the most popular and fastest growing devices in the field of power electronics in recent years. So the development of test methods and test platform suitable for high voltage high power IGBT devices and modules, are not only important to evaluate the performance of the device and module, but also necessary for the application of the devices. However, the power devices and module testing equipment is still dominated by foreign manufactures, Though the power devices industry in China is developing very quickly these years, the domestic testing equipment products are still not recognized.. Therefore, it’s very essential to establish a test platform for high power high voltage semiconductor device.The parameters for IGBT devices can be divided into two types:static and dynamic parameters, static parameters mainly including VGE(th)(gate threshold voltage), VGES(gate breakdown voltage), IcEs(gate-emitter leakage current),VGES(collector-emitter blocking voltage), IcEs(collector-emitter leakage current),parasitic capacitance:Cies(input capacitance),Cres(reverse transfer capacitance),Coes(output capacitance),VCE (sat)(collector-emitter saturation voltage),and related curve. Dynamic parameters includes:td(on)(turn-on delay time),tr(rise time),td(off)(turn-off delay time),tf(fall time),Eon(turn-on loss),Eoffturn-off loss),In-(reverse recovery current),tn-(diode reverse recovery time)and Err(reverse recovery energy)Firstly, this paper introduces the test methods for IGBT static and dynamic parameters. And a new simple testing method for static output Ⅰ-Ⅴ curve is proposed in this paper. Based on the understanding of these testing methods, the detailed design of each part in the static/dynamic testing system is illustrated.Then, based on the designed testing platform, The IGBT modules from Fuji Electric (2MBI200U4H-120), Toshiba (MG500Q1US1), Mitsubishi (CM1200HA-66H) and a unique high voltage (10000V) IGBT module developed in the laboratory are test to verify the performance of the testing platform, the test results are discussed.