High-voltage And High-current Sillicon Carbide MOSFET Series-parallel Connected Module

Silicon carbide (SiC) MOSFET is a kind of new wide bandgap semiconductor devices those can be applied in higher temperature, higher frequency and higher power density conditions compared to the silicon semiconductor devices. However, the capability of commercial available SiC MOSFET is about1200V/40A limited by the immature growth of silicon carbide wafers and manufacturing process of SiC MOSFET. In order to apply SiC MOSFET in higher power conditions, SiC MOSFET should be series-parallel connected.This paper analyzes the published metholds for power device series connection and points out their advantages and disadvantages. A novel series topology with single external driver has been introduced. In order to increase the current capability of the circuit, two lines SiC MOSFETs are connected in parallel. Working principle and design features of the series-parallel circuit are described in detail. A3600V/80A discrete SiC MOSFET circuit is relisized with three in series and two in parallel, its switching speed and losses are analyzed.In order to integrate the3600V/80A SiC MOSFET series-parallel circuit in a module, this paper introduces the industrial design and manufacture process of the power module, then a3600V/80A SiC MOSFET series-parallel module is designed and manufactured. The double pulse test of the module is accomplished at2400V/80A. Result comparison of the discrete circuit and the module is given in the paper.