Research On Integrated Package Interconnection Technology Applied To Millimeter Wave Phased Array Antenna

With the rapid development of micro-electronic information industry,people’s demand for communication,radar,personal electronic consumption and other fields is getting higher and higher.They are eager to make products to meet the requirements of smaller volume,stronger function and lower power consumption.However,traditional design schemes have been difficult to meet.It directly promotes China’s microelectronics industry and the packaging technology of high integration density circuit to develop more rapidly.Along with the continuous development of microelectronics technology and improve,people have proposed using encapsulation Antenna（Antenna-in-package,Ai P）instead of the traditional board level system.the 3D integration of micro/nano technology and packaging technology organically,will greatly reduce and reduce the loss of internal system interconnection,greatly improve and upgrade the system energy efficiency.It provides an effective means for the integration density of the whole system to exceed Moore’s law,and it will become the focus of future millimeter wave integrated packaging.In the field of MMW integrated package interconnection,vertical interconnection through-hole structure is often used to realize cross-structure signal transmission between dielectric layer and dielectric layer or between chip and chip,which enriches product structure and function.At the same time,the transmission properties of hole structure will directly affect the quality of signal transmission,key alloy silk interconnection structure is currently one of the most commonly used to interconnect,will also affect millimeter wave transmission characteristics,so the impact vertical interconnect via,and the transmission properties of gold wire bonding interconnection structure factor is necessary.In this thesis,the vertical interconnection through hole structure of W-band multi-layer dielectric substrate is systematically studied,and the vertical through hole and microstrip transmission line are briefly analyzed theoretically.The three-dimensional electromagnetic simulation model of vertical interconnection through hole of multi-layer dielectric substrate is established by using HFSS software.The influence of the radius of the through hole and the radius of the solder pad on the microwave transmission of the signal of the vertical interconnection through hole structure was analyzed by the control variable method.Impedance matching technology is used to realize impedance matching between structures in ADS.Application of Smith chart according to the return loss and insertion loss and dielectric substrate S parameters,such as material properties,determined the microstrip transmission line structure size of the working frequency in 90GHz,and to design a good structure of transmission line model in the HFSS simulation and verification,make multilayer dielectric substrate structure of vertical interconnect via microwave transmission characteristics are improved to a certain extent.This paper will also carry out a systematic study on the interconnection mode of the key-alloy wire in the package structure of Ku band four-channel phased array T/R multifunction chip,and conduct a brief theoretical analysis on the equivalent circuit of the key-alloy wire interconnection structure.The HFSS three-dimensional electromagnetic simulation software was used to build the structure model,and the influence of parameters such as the number of grounding wires and the number,diameter,arch height and span of RF signal wires on the signal microwave transmission characteristics was analyzed by the control variable method,and the size of the structure was optimized,which effectively improved the transmission performance of the interconnection.According to HFSS simulation results,when the frequency of the working center is 15 GHz,the return loss S₁₁ of the structure is less than-12 dB,and the microwave transmission performance is excellent.