Design Of Broadband Power Amplifier And Research On Temperature Compensation Circuit

Power amplifiers are essential devices of many communication systems.The features of a PA regarding the bandwidth,power gain,linearity,output power,and power added efficiency could significantly affect the overall performance of the system.Therefore,in order to improve the performance of the system,a broadband highefficiency power amplifier with superior index is in high demand by the industry and market.Although,power amplifiers based on traditional III-V compound process design can achieve higher output power,the process cost is higher.CMOS technology has many advantages such as wide application and easy system integration.As the amount of wireless connected devices increase,it is inevitably the best choice for system miniaturization and low cost.On the other hand,the performance of CMOS devices is significantly affected by the external temperature and the self-heating effect.A series of problems such as gain variation and linearity degradation is introduced by the variation of temperature.Therefore,this paper mainly discusses the implementation method of wideband power amplifier based on CMOS technology,and the temperature compensation circuit of stacked structure power amplifier.The following is a summary of the work and innovations of this paper:1.Based on the problems of large area for passive components in the VHF/UHF band,a 0.1-1.5 GHz ultra-wideband stacked power amplifiers using 0.18?m CMOS technology is proposed.By combining a two-stage quadruple-stacked stack structure with feedback techniques,the power amplifier exhibits ultra-wideband characteristics.Without the need of an additional matching network,both broadband impedance matching and lower chip area is achieved,and research results have been submitted to an academic journal.2.The performance of CMOS devices is obviously affected by the external environment temperature and self-heating effect,thus,a novel temperature compensation circuit for stacking structure is proposed.Based on this method,two stacked power amplifiers with temperature compensation network are designed,one is a single-ended three-stacked power amplifier with temperature compensation,and the other one is a differential stacked power amplifier with temperature compensation.Both circuits cover the Ka-band and the broadband performance of 25-40 GHz is realized.Compared with the conventional bias circuit,the temperature fluctuation of the small signal gain is significantly improved by using the novel temperature compensation bias network.Relevant research results has been published.