Research On The Key Technology Of Designing And Processing Of TSV-based Graphene Pressure Sensor

Graphene is one kind of excellent mechanical and electrical properties of two-dimensional film material.It has extremely high research value when applied to pressure measurement devices as the core sensitive unit,and has great potential in the field of large-range pressure measurement.However,due to the single-layer structure of graphene,the device of it has problems with small range,large package volume,poor stability,and limited practical application which is the biggest obstacle of practicality and commercialization of graphene.This thesis presents a graphene based TSV pressure sensor,and designs its overall structure,process processing program,and photolithography mask.Through research and breakthroughs in key process technologies,the graphene nano film is used as the core sensitive material,the development of a pressure sensor chip that transmits electrical signals through a TSV structure provides a solution for the miniaturization of graphene pressure sensors.First of all,this article carried out the overall design of the graphene pressure sensor based on TSV.By the band theory of graphene and finite element analysis to determine the overall configuration and specific dimensions of the sensor,and the process flow and photolithography mask of the sensor are designed.Then,this article study the process technology of TSV-based graphene pressure sensor chip.We focus on the preparation process of the high aspect ratio TSV structure,the nondestructive transfer and patterning process of graphene nano-films,and the preparation process of the suspended cross beam structure.Combine key processes through process flow sheets,and TSV-based graphene pressure sensor chip samples are finally obtained.Finally,this article carried out corresponding tests and characterizations on the obtained TSV-based graphene pressure sensor chip samples.We mainly characterizes the filling quality of the TSV structure,the transfer quality of the graphene nano-film,and the performance of the pressure sensor chip.The results show that there are no obvious faults,voids,etc.in the TSV structure,and the interface layers are clearly distributed,and the filling quality is very well;there are no obvious folds,rifts,holes and other defects on the surface of the graphene nanofilm,and obvious impurities remain and the transfer quality is very well;the pressure sensor chip is turned on,the resistance is stable,and the electrical performance is good,the pressure sensor chip is turned on,the resistance is stable,and the electrical performance is good,with the increase of the applied displacement,the resistance increases continuously,basically showing a linear relationship,and meets the changing law of the graphene piezoresistive effect.