Study On Electronic Structure And Transport Properties Of Two-Dimensional Rhenium Disulfide

In recent years,the booming development of the Internet of Things(IoT)industry has placed higher demands on the performance of digital devices such as low power consumption and fast response.However,the basic component of electronic devices nowadays is silicon-based field-effect transistors,which will suffer severe short-channel effect when scaled down to 10 nm,making it difficult to meet actual needs.Two-dimensional material has smooth surface,atomically thin and uniform thickness,which are beneficial for field effect transistors to gain ideal gate control ability and effectively suppress the short-channel effect.Rhenium disulfide(ReS2)is one of the recent hotspot transition-metal dichalcogenide materials,and its suitable direct band gap(1.47 eV)and electronic anisotropy indicate broad prospects for its application to novel field effect transistors.In this paper,the performance limits of n-type sub-10 nm monolayer ReS2 metal-oxide-semiconductor FETs(MOSFETs)are studied using ab initio quantum transport simulation.Due to the electronic anisotropy,the zigzag-directed devices perform better than the annchair-directed ones.The zigzag-directed sub-10 nm ML ReS2 MOSFETs show low subthreshold swing down to 52 mV/dec and high on-current up to 486?A/?m.Compared with the international technology roadmap for semiconductors(ITRS)2013 edition,the delay time and power-delay product of the zigzag devices can fulfill the requirements for the low-power applications until the gate length scaled down to 3 and 1 nm,respectively.The excellent electrostatics,large on-current,and ultra-low energy consumption make ReS2 a promising candidate for future electronics in the coming IoT era.