| As a typical kind of transition metal dichalcogenides, molybdenum disulfide attracted broad attention because of its wide range of physical properties. Due to the graphene like microstructure, ideal carrier mobility and nearly immune to short-channel effect, it has extensive application prospects on a host of microelectronic devices, such as hydrogen storage devices, field effect transistors and photo-detectors. In this thesis, different types of molybdenum disulfide thin films were prepared using CVD method, and their morphology and electrical properties have been characterized by multiple common approach. Top-gated/back-gated FETs were fabricated based on single-layer or multi-layers molybdenum disulfide channel, and their electrical properties have been characterized. The main contents are as follows:(1) Effects on the morphology of molybdenum disulfide film synthesized by CVD method of various experimental parameters were analyzed, and most appropriate parameters are determined. The characterizations of microstructure and crystallization quality were performed using optical microscope, atomic force microscope, RAMAN, XRD. The amount of metastable molybdenum disulfide such as 3R-molybdenum disulfide was reduced by improving the process.(2) Back-gated FETs were fabricated using single-layer/multi-layers molybdenum disulfide synthesized by CVD method as channels, and their electrical properties were characterized. The result indicates that single-layer molybdenum channel has a carrier mobility of 0.03 ± 0.01 cm2V-1s-1, while triple-layers molybdenum channel has a higher carrier mobility of 0.6 cm2V-1s-1, both of them are n-type channels. Top-gated FETs were fabricated and characterized, and the result shows that the carrier mobility can be increased to though introducing a layer of high-K dielectric film.(3) Photo-detector with a transparent substrate was fabricated and characterized. The results reveals a great photoresponsivity of 1.92×10-3 AW-1while exposed to 580 nm yellow light. |
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