Optimization And Application Of Memristor Model And Research On Its Array Characteristics

With the development of modern information technology and Internet technology,the era of big data has arrived.The capacity,read-write speed and power consumption of current memory can no longer meet people's storage requirements for massive data.In recent years,in order to break through these limitations,researchers have been working to find new storage devices.With the development of new memory materials,memristors have become one of the most promising alternatives to traditional memory cells.The memristor is a two-port device with variable resistance.The resistance of a memristor changes with the amount of charge passing through it.The memristor can be used in many aspects such as logic storage and neural network circuits because of its non-volatility,low power consumption,nanometer size,high-speed reading and writing characteristics and the compatibility with traditional CMOS circuits.At present,memristor devices with good performance and stability are difficult to be prepared.Many researchers have studied the basic principles of memristors and their applications in complex circuits with the simulation study of memristor models.Based on this,this paper optimizes the memristor model and explores the applications of the memristor model in synapses and logic circuits,and establishes a general model of the memristor array and a crosstalk analysis system,aiming to provide theoretical and practical basis for the practical application of memristors.Firstly,based on HP Lab's memristor model,a memristor simulation model was built in Cadence simulation software in this paper.The model was used in complex circuit to explore the application of memristor in logic circuit and the characteristics of memristor in neurobiology.The results show that the memristor can implement basic logic operations and correctly simulate the basic characteristics of synapses.Secondly,in order to extract and digitize the simulation results of the memristor model,this paper also modeled the memristor in Matlab with various methods,and optimized and improved the scalability and voltage threshold of the model,and further explored the influence of the parameters of the memristor model on the electrical characteristics of the memristor.The results show that the parameter settings in the memristor model have a crucial impact on the electrical characteristics of the memristor.The improved model has scalability and voltage threshold characteristics,and is in good agreement with the characteristics exhibited by the actual memristor.Finally,this paper creatively proposed a general model based on voltage and current data of actual memristor,encapsulated the model into a two-port device,and built a memristor array analysis system to analyze the crosstalk problem in the memristor array.The model made the simulation results of the memristor model closer to the test results of actual device.The results show the correctness of the memristor model and the feasibility of using this memristor model for array crosstalk analysis.The paper studies the model of the memristor and its basic principles,analyzes the problems of existing memristor models and their applications,and improves the scalability and voltage threshold of the memristor model.Taking the key parameters in the improved memristor model as the research object,this paper explores the influence of each parameter on the electrical characteristics of the memristor model.Furthermore,a general memristor model based on volt-ampere data of actual memristor is proposed,and a memristor array analysis system is invented for crosstalk analysis of the memristor array.Through the relevant theoretical argumentation and experimental simulation analysis,the correctness and feasibility of the proposed method are verified,which provides an effective analysis method for the application of memristor in practical circuits.