Research On Design And Application Based On Memristor Read/Write Circuit

With the maturing of chip integration technology, Moore's law has been challenged. The current storage technology has developed into the bottleneck due to the limitation of material and technology. But the memristor, which has the characteristics of resistance change, non-volatilt, and the size of the nanoscale, satisfied with large memory capacity, high speed and low power requirements, can be used to solve the current difficulties in storage technology.This paper introduces the current mainstream storage technology and the emerging storage technology using memristor, analyzes the advantage of the storage technology applying memristor, and the performance parameters of those storage technologies are compared. Meanwhile, this papers introduces the HP memristor model and the relative model in detail.Based on HP memristor model and in order to satisfy the need of data access, we studied the reading and writing process of the memristor model through mathematical analyses and consulted relevant literature, analyzed the relevant memristor reading and writing scheme. The damage would be made to the date stored in the memristor during the reading process has been proved through the mathematical analyses and simulation, and a new reading and writing scheme is presented in this paper.This paper also studied application of the design and put forward the application in multivalued storage and crossbar array storage. Four different stages are designed and a new reading and writing scheme is proposed for multivalued storage; the design is applied in crossbar array storage and has been successfully simulated with the 4X4 crossbar array.