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Optical Bistability with Two Serially Integrated InP-SOAs on a Chip

Posted on:2016-02-09Degree:M.SType:Thesis
University:Rose Hulman Institute of TechnologyCandidate:Plascak, Michael EdwardFull Text:PDF
GTID:2478390017985357Subject:Optics
Abstract/Summary:
Optical Bistability with Two Serially Integrated InP-SOAs on a Chip Thesis Advisor: Dr. Azad Siahmakoun A photonic switch using two series-connected, reverse-biased semiconductor optical amplifiers integrated onto a single device has been proposed and switching operation has been verified experimentally. The switching operates on two principles; an electrical bistability arising from the connection of two p-i-n structures in series, and the quantum confined Stark effect in reverse-biased multiple quantum well structures. The result is an electroabsorption modulation of the light through the SOAs due to the alternating voltage states. The system simultaneously produces outputs with both inverted and non-inverted hysteresis behavior, with experimental switching speeds demonstrated up to 400 kHz for a reverse-bias voltage of VRB=2.000V.
Keywords/Search Tags:Bistability, Integrated
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