| In this work, four standard cell libraries based on FinFET technology have been characterized and implemented. The first library uses the BSIM-CMG and PTM-MG models, which represents the common multi-gate devices. Two libraries are based on the BSIM-IMG model, operating in short-gate (corresponding to low-Vt) mode and low-power (corresponding to high-Vt) mode separately. Synthesis and simulation of BSIM-CMG based library is presented and compared to the conventional 45nm CMOS library, FreePDK45. The results show acceptable accuracy of the library based on BSIM-CMG model. For the libraries based on BSIM-IMG model, Short-Gate (SG) mode, Low-Power (LP) mode and the mixed-mode (combining both SG and LP modes) have been analyzed. The results proved that the low-power independent multi-gate FinFET can be used for leakage power reduction, just like the bulk CMOS high-Vt devices. At the end of this work, another library based on CCS model was characterized and verified, which show far better accuracy in terms of both timing and power modeling. |
