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Analysis of plasma etch defects utilizing a comb test structure

Posted on:1993-10-07Degree:M.SType:Thesis
University:The University of ArizonaCandidate:DeLoach, Charles AlanFull Text:PDF
GTID:2478390014496000Subject:Engineering
Abstract/Summary:
Three metal compositions are patterned via plasma etching into comb structures. The comb structures have pitches of 4 mum, 5 mum, 7 mum and 12 mum, with a line width of 2 mum, on a field oxide of 8,000 Angstroms thickness, using ⟨ 111⟩ p-type substrates. These comb test structures have been used to determine the number of bridges, and thus the yield, of the metal compositions: pure aluminum, silicon(2%)-aluminum, and copper(0.5%)-silicon(2%)-aluminum. Bridge failures are photographed and classified according to the source of the defect. The defects due to plasma particles are used to determine a yield model for this etch process. Through the use of yield model and test structure data the etch process is evaluated for the different metal systems. This allows a quantitative comparison of the systems in terms of defect clustering, defect density and defect size distribution, and hence projections for the best yielding process via the yield model.
Keywords/Search Tags:Comb, Defect, Plasma, Etch, Yield model, Mum, Test
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