| A great demand for portable and highly integrated high speed electronic components and systems has recently surfaced as a result of the vast expansion of personal communications and other wireless applications. As more and more applications in personal communications require frequencies between 1 and 100 GHz, a reduction in the cost of III-V technology is necessary for a wide distribution of wireless products in the consumer market. III-V technology provides improved and unique functionality compared with silicon CMOS integrated circuit (IC) technology, yet current III-V technologies cannot meet all the demands of low cost, high levels of integration, low power, and performance because of high material costs and low yield compared with the current silicon technology.; In this thesis, thin film mixed material integration is investigated as a method to increase functionality at lower cost. InP active devices are removed from the growth substrate and integrated onto other host substrates such as silicon via substrate removal. Characterization of these devices is performed. Also, thin film passive components via deposition on free standing polyimide are evaluated for lower cost and increased design freedom. By optimizing the passives and III-V active components separately and then integrating the two opens a new realm in mixed material integration. |
