Wide-Band Low Noise Quadrature VCO in CMOS SOI

This thesis presents a wide-band, low phase noise, low power Quadrature Voltage Controlled Oscillator (QVCO) designed in 0.18um CMOS Silicon on Insulator (SOI) technology. The 2.4 GHz ISM band QVCO achieves -124 dBc/Hz phase noise at 1MHz offset, 25% tuning range and 2.4mW power consumption under 1.1V supply.;The SOI technology facilitates the design of high performance LC-VCO. High substrate resistance of SOI enables the fabrication of high Q on-chip inductor, which significantly improves VCO's phase noise performance. Moreover, an accumulation-mode (AMOS) varactor with reduced junction parasitic in SOI widens the VCO's tuning range.;The Ring Injection Locked Frequency Divider (Ring-ILFD) demonstrates its wide locking range and low power consumption in high speed application. A combination of multiple injection and direct injection technique is used in this design to further enhance the locking range. The ILFD generates quadrature signal by halving the core VCO's output while strictly following its phase noise performance.