Lateral resolution in laser induced forward transfer

In this thesis the lateral resolution limits of the Laser Induced Forward Transfer (LIFT) technique are being investigated. LIFT is a laser direct write process with micron and below resolution and is suitable for modifying, repairing and prototyping micro-devices. Single laser pulses with wavelength of 800 nm and duration of 130 fs from a Ti:Sapphire laser system were focused onto a transparent donor substrate coated with thin film to transfer the thin film material in the form of micro-disks through a small air gap onto an acceptor substrate. In this thesis, donor glass substrate coated with 80nm continuous Cr film and also Cr disks array patterned by photolithography or e-beam lithography were used as targets. The ablation threshold and transfer threshold were determined experimentally and compared to results from two-temperature model (TTM) simulations and reasonably agreement was obtained. For the continuous film target, the size of the LIFT disks depend on the laser fluences and the smallest sizes of around 700 nm were obtained near the transfer threshold. For the pre-patterned disks array targets, initially 1.3mum Cr disks were fabricated on the donor substrates by photolithography. Small focused, larger defocused and large top-hat laser beams were used to transfer the pre-patterned Cr disks. The morphology of the transferred material and reliability of transfer were studied. It was found that the large top-hat beam gave the most reliable and high quality transfer results, resulting in mostly intact LIFT disks on the acceptor substrate. To push the resolution limit further, 500nm Cr disks fabricated on the donor substrate by e-beam lithography were used. The successful transfer of these 500 nm Cr disks gives a positive indication that LIFT can potentially be extended further to the nano-scale regime (usually defined as having sub-100 nm resolution).