| At present, laser lift-off epitaxial wafers is a popular method to obtain UV-LED technology。It has unique advantages compare to other etching process to obtain LED epitaxial films.In this paper, we have discessed the impact of different laser pulse in GaN lift-off processing. We have obtained the interaction parameters that excimer laser irradiate in the heteroepitaxial films.We irradiate the samples in the process of stripping for a variety of methods to get UV light-emitting GaN epitaxial films. By using a laser lift-off technology, we can fabricate ultraviolet light-emitting diode. The optical properties of GaN films were analyzed before and after laser lift-off.We have obtained the optimal conditions for excimer laser lift-off. The7.5mm of GaN epitaxial films were successfully stripped by600mJ/cm2.38ns. lOHz,248nm KrF excimer laser, We have studied the rougness of the samples after laser lift-off and obtained the method of improving the rougness. |
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