Preparation Of Metal Oxide Nanofiber Field-effect Transistor And Regulation Of Electrical Performance

Nanofibers?NFs?are widely applied in the fields of optoelectronics,sensing,electronics and other fields due to their unique morphology and structure,which have the advantages of enormous surface-to-volume ratio and distinctive transport characteristics.Electrospinning is widely used in the preparation of one-dimensional nanofibers of various materials due to its advantages such as no complicated production environment and large area preparation.Through electrospinning technology,our study is focused on improve the electrical performance,and reduce the cost of field effect transistor?FET?,and prepare high-performance and low-power FETs.In this paper,the main research contents and results are as follows:?1?We have synthesized Al?Ga or Cr highly doped In₂O₃ nanofibers by electrospinning which can improve the electrical performance of the FETs and reduce the consumption of In₂O₃.The devices with 10mol%?Al,Cr and Ga?doping concentration exhibit optimal performance:large Ion/Ioff??10⁸?,high saturation current(?10^-4 A),and small and positive V_TH?<6.0 V?.When a high-?thin-film of Al₂O₃ is employed as the gate dielectric,the operating voltage of the constructed FETs was reduced from 30 V to 3 V,and electron mobility was improved from 2 cm²V^-1s^-1 to 10cm²V^-1s^-1.At the same time,the device has good stability.After 60 consecutive repeated tests,the performance of the device does not change significantly,and the device still has good electrical performance after 3 months of exposure to the air.?2?NFs with different diameters were prepared by simply changing the diameter of the needle in electrospinning.The relationship between the diameters of NFs and the electrical performance was systematically studied.The high performance In₂O₃?SnO₂and ITO FETs were fabricated by simply changing the diameter of NFs without doping any other elements,and the performance of the optical devices achieving or even exceeding the performance of doped devices,where In₂O₃ FETs:large Ion/Ioff?10⁸,high saturation current?10^-4 A,and small V_TH?2.5 V;SnO₂ FETs:large Ion/Ioff?10⁷,high saturation current?10^-5 A,and small V_TH?1.8 V;ITO FETs:large Ion/Ioff?10⁸,high saturation current?10^-4 A,and small V_TH?2.8 V.At last,the operation voltage of the device is further reduced by the high?dielectric layer Al₂O₃ and the mobility of the device is also greatly improved by 9x.The mobility of high?In₂O₃ FET is as high as360 cm²V^-1s^-1.