Research On The Preparation And Performance Of Metal Oxide Nanofiber Transistors

One-dimensional(1D)semiconducting nanostructures with excellent physical and chemical properties are fundamental building blocks for enormous technological applications,such as electronics,sensors,photonics,energy,and so forth.In particular,1D metal-oxide semiconducting nanostructures have attracted considerable attentions,because of their high mobility,high stability and high transparency.Among various 1D nanomaterial fabrication techniques,electrospinning technique is one of the most powerful approaches for fabricating continuous 1D nanomaterial in situ.During the past decades,electrospinning had been widely used to produce various nanofibers(e.g.,polymeric,inorganic and composite nanofibers)with diameters ranging from tens nanometers to several micrometers.The electrospinning process can be performed in ambient atmosphere without any special precautions,avoiding the expensive synthesis approach.Moreover,electrospinning technique also brings high output of nanofibers with a yield of~1,000 m~2/h or 20,000,000m~2/year,which is beneficial to the mass production for consumption electronics.These advantages make electrospinning an attractive technique in various fields,such as electronics and biomedical applications.However,the nanofibers networks(NFNs)fabricated by electrospinning technique are usually formed via physical stacking(weak interfiber connections),resulting in inferior mechanical property and high contact resistance.This innate drawback potentially restricts the implementation of the NFNs in a number of practical applications,especially in electronic devices in terms of electrical performance and operational stability.Therefore,extra processing steps were usually applied and expected to improve the interfiber connections.Up to now,hot pressing and cross-linking have been the commonly used methods to improve the interfiber connection of the NFNs.However,hot pressing is difficult to be used for the polymers with high melting point(e.g.,polyimide),and most cross-linking agents are detrimental to the human health and environment.It is highly desirable to develop a facile and universal technique for assembling the stacking NFNs in large area and with strong interfiber connections.In this paper,we aim to fabricate metal-oxide nanofibers(NFs)using the facile and low-cost electrospinning technique.The electronic transport of these NFs will be adjusted by optimizing experimental parameters(i.e.,selecting suitable doping elements,controlling appropriate doping concentrations,optimizing annealing temperatures,and so on).The subsequent device integration with solution-processed high-k dielectrics will be beneficial to achieve high-mobility NF field-effect transistors(FETs)capable to operate at low voltages.Meanwhile,the effect of high-k dielectrics on corresponding device performances will be thoroughly discussed.Eventually,individual NF devices will be heterogeneously integrated to achieve MOS circuits.The results achieved in this project not only provide technological basis for the development of high-performance,low-power and one-dimensional electronics,but also provide the theoretical and experimental support for the fabrication of MOS-based integrated circuits.