The Preparation Of Oxide Semiconductor Nanofibers And Their Application On Gas Sensing And Field-effect Devices

Sensing technology, computer technology and communications technology constitute thebackbone of modern science and technology. Sensing technology as the core technology of high-tech,sensing technology has attracted more attention in many countries. The accuracy informationgathered by the sensor ensure the communications systems, information systems and automatedsystem security. As a key of the sensor field, gas sensors are widely used in industrial production,traffic, air pollution and harmful gas leakage detection.In the field of gas sensors, WO₃is a traditional sensitive material for hydrogen detection, it hasbeen widely developed and studied because of its excellent thermal stability and high sensitivity. Theelectrospinning technique is an emerging technology for preparing one-dimensional nanomaterial,which has attracted many researchers’ attention for their large specific surface area and high speed ofelectron transport properties.The first part of the paper introduced the electrospinning technology for preparation of WO₃nanofibers material. WCl6/PVP composite nanofibers were prepared by regulating the composition ofthe precursor solution. WO₃nanofibers were obtained by calcinated the composite nanofibers undergradient heating temperature. WO₃and WCl6//PVP nanofibers have been analyzed by XRD and SEMcharacterization methods respectively. The results showed that pure WO₃nanofibers have beenprepared and the diameter of the pure WO₃nanofibers material were uniform, besides that thematerials had relatively large specific surface area.WO₃nanofibers material exhibited good sensitivity and fast response and recovery properties in100ppm of NO2. When the heating current reached115mA, the sensitivity is45, the response timeis15s and recovery time is14s.The second part of this paper introduced the application of metal oxide semiconductornanomaterials in the field of FET as active layer. Combined with the laboratory experimental conditions, four kinds of devices were designed and the characteristic were tested on a selecteddevice. When the gate voltage was in the forward bias, the drain voltage was40V, the outputcharacteristic curve showed saturation, the device had the characteristics of transistor.Through these two aspects of work, the metal oxide semiconductor nanomaterials were appliedto two kinds of electronic devices. WO₃gas sensor basing on one-dimensional nanomaterials showedgood gas sensing properties, and the FET basing on one-dimensional In2O₃nanomaterials alsoshowed transistor characteristics too.