Research And Design Of Low Noise Amplifier And Power Amplifier Based On GaN HEMT

With the continuous development of semiconductor technology and communication industry,the demand for accelerating the information transmission and widening the operating frequency band is increasing,and the requirements for the performance of the devices in the new standard system are also raising.Due to the advantages of gallium nitride materials such as robustness,good stability,and high breakdown voltage,the research and design of amplifiers based on Ga N technology has been favored by researchers.Low-noise amplifiers and power amplifiers are important components for RF front-end transceivers in communication systems.With the increasing digitalization of human society,the increasing demand for communication applications has proposed higher demands on their device performance.For the design of the RF front-end module of the communication system,The main work of this article is using the Chengdu Hi Wafer 0.25?m Ga N HEMT process to design a MMIC low-noise amplifier chip and a power amplifier chip,and complete the chip design,Simulation,streaming research work.This article mainly carried out the following work:1?Based on the 0.25?m Ga N HEMT process,an S-band(2 ? 4GHz)MMIC low-noise amplifier was designed,meanwhile,chip tape-out and testing were completed.The circuit is a two-stage cascaded amplifier structure.The input and output matching both adopts an Lshaped network structure.The series resistance in the inter-stage matching network improves the stability of the circuit and obtains a flat gain flatness curve.The measured results show that in the 2GHz ? 4GHz frequency band,when the two-stage operating voltage is Vgs1 = Vgs2 =-3V,Vds1 = Vds2 = 28 V,S21 is 22.5 d B-24.3 d B,the gain flatness is about ± 0.9 d B,input and output return loss can meet the requirements of less than-10 d B,and the noise figure in the 90% frequency band is less than 2.0 d B.The test results are basically consistent with the simulation results,and meet the technical specifications of the LNA.2?Based on the Ga N HEMT process,a broadband power amplifier with a working frequency range of 3.3 GHz to 3.8 GHz was designed,and layout simulation and tape-out were completed.The load impedance and output power of the output terminal are obtained through the ADS software simulation platform,and then the size and number of transistors are determined.According to the requirements of the indicators,the circuit is divided into two stages: power stage and driver stage.And then connect the two-stage amplifier circuit.The circuit uses the gate series RC negative feedback structure to enhance the stability of the circuit.The matching network uses a T-shaped network structure,and a DC capacitor is isolated at the signal input and output terminals with a series capacitor.The simulation results show that the designed power amplifier has an output power greater than 28 d Bm,a gain greater than 23 d B,an IMD3 less than-42.186 d Bc and an IMD5 less than-67.235 d Bc in the 3.3 GHz to 3.8 GHz operating frequency band.The requirement of high power and great linearity of power amplifier in 5G communication is realized,and the design requirements of power amplifier in 5G communication system frequency band is achieved.