Font Size: a A A

Research And Design On Transceiver Front-end MMIC Amplifiers

Posted on:2019-03-29Degree:MasterType:Thesis
Country:ChinaCandidate:Z T ZhuFull Text:PDF
GTID:2348330569987737Subject:Circuits and Systems
Abstract/Summary:PDF Full Text Request
To meet the requirements of high-frequency and miniaturization of wireless communication system in the future,researches on the transceiver front-end MMIC amplifiers have been attracting attention.The MMIC low noise amplifier at the receiver front-end can affect the sensitivity and noise figure of the receiving system.And the MMIC power amplifier at the transmit front-end,as the most power consumption device among the transmitter,its efficiency determines the efficiency of the whole transmitting system.Therefore,this paper will study the noise figure of MMIC low noise amplifier and the efficiency of MMIC power amplifier.The main contents of this dissertation are summarized as follows:1.Firstly,the architecture of MMIC transceiver system is summarized.And then,the importance of receiving front-end MMIC low noise amplifier and transmitting front-end MMIC power amplifier is analyzed.After that,to choose a proper process,the performance of MMICs between different substrates are compared and analyzed.In the end,the key devices that constitute an MMIC amplifier are studied,including the device model,equivalent circuit and the voltage current limit condition.2.In the study of MMIC low noise amplifier,the factors affecting the transistor's noise figure are studied and analyzed at first.And then,as the traditional input network produce too much additional noise,a simplified bias network and a low noise input matching network is proposed.By using these structures,the amplifier can realize the noise matching and in the mean while reduce the noise introduction of the input network,which makes the low noise amplifier with excellent noise performance.In the end,to validate the low noise input network,a 12~18 GHz MMIC low noise amplifier,which can be used in satellite communication,is designed by using the 0.13-?m Ga As pHEMT process.Experimental results show that,the noise figure is approximately 1.5 dB in 12~17.5 GHz,and the noise figure is better than 1.21 dB at 16.5 GHz.Under the test of single tone small signal,the gain of the low noise amplifier is 22±1dB in 12~18 GHz,and the gain flatness is better than ±0.5dB in 13~17.5 GHz.This MMIC low noise amplifier is comparable with other Ku band low noise amplifiers.3.In the study of MMIC power amplifier,the working mechanism of high efficiency continuous class power amplifier models based on waveform engineering is analyzed firstly.And then,in view of the key problems that affect the efficiency of MMIC power amplifier,further researches are expanded.Including: the impedance matching problem in MMIC,the influence of the via hole's parasitic parameters on optimal impedance,the design of power combining network with harmonic control,as well as the effect of former amplifier's efficiency on overall efficiency.To verify the feasibility of the high-efficiency MMIC power amplifier design method,a 26.5~29.5 GHz MMIC power amplifier,which based on the application prospect of 5G communication,is designed by using the 0.13-?m GaAs pHEMT process.Electromagnetic simulation results show that,the saturation drain efficiency is 50.9%~55.2% from 26.5 to 29.5 GHz,the output power is 30.5~31.1 dBm,and the gain is more than 10 dB,which is comparable with other Ka band MMIC power amplifiers in its drain efficiency.
Keywords/Search Tags:GaAs MMIC, High-efficiency power amplifier, Low noise amplifier, Ku band, Ka band
PDF Full Text Request
Related items