Font Size: a A A

Research On Microwave High Dynamic Range Receiver Chip Technology Based On Silicon Process

Posted on:2021-01-16Degree:MasterType:Thesis
Country:ChinaCandidate:H DingFull Text:PDF
GTID:2428330626955976Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
In radar and satellite,high dynamic range receivers are important.Amplifiers and mixers are components of receivers,and the linearity and noise performance determine the dynamic range.Therefore,high-performance amplifiers and mixers have become hot research topics,This article designs a Ku-band front-end circuit using BiCMOS process.Based on the researched circuit,CMOS process is used to design the Ka-band front-end circuit.The details are as follows:A LNA with BiCMOS technology is designed.The shunt inductor and feedback structure are added to achieve a gain of greater than 13.5 dB and a noise figure of less than 3 dB.The OP1dB is greater than 13.3 dBm.The driver amplifier adopts feedback to achieve a good match,The gain is greater than 11 dB,and the OP1dB is greater than 11,3 dBm,The amplifiers have low noise,high gain,and high linearity,which can be applied to the high dynamic range receiving chip,A passive mixer is designed.By modeling the balun,the line length and bandwidth are optimized,Adding ground and IF take-out capacitors improves the loss and size.The conversion loss is less than 8.5 dB,and the OP1dB is 5 dBm.Combined with amplifiers,simulation results show that the noise figure is less than 5 dB,the gain is greater than 12,5 dB,the OP1dB is greater than 10 dBm,On this basis,the test is completed and the simulation is analyzed.The circuit has good effects of low noise and high linearity,and realizes high dynamic range.ALNA in CMOS process is designed.Based on cascode structure,source inductor and a feedback structure improve the bandwidth.A gate bias voltage control circuit with PTAT achieves stable performance over the entire temperature range.The gain is greater than 16 dB,the temperature fluctuation is less than 1.5 dB,the OPldB is greater than 6.9 dBm,the noise figure is less than 4 dB.It can be applied to the phase shift attenuation front-end transceiver chip.This research shows that each circuit module have good performance and are suitable for the front-end system of the receiving chip,which can improve the dynamic range.
Keywords/Search Tags:BiCMOS, CMOS, passive double balanced mixer, LNA, receiving chip
PDF Full Text Request
Related items