Design Of Low Noise Amplifier And Mixer For Millimeter Wave Communication

With the rapid development of wireless communication technology,radio frequency integrated circuits have been widely studied.And in the era of the information explosion,due to the rapid increase in data rates,spectrum congestion and other problems,the operating frequency band of radio frequency integrated circuits is gradually shifting from radio frequency bands to the millimeter wave band.Especially in recent years,with the continuous development of 5G(Fifth Generation)technology and the need for high-speed information transmission,millimeter-wave communication is becoming more and more important,and research on millimeter-wave integrated circuits is becoming a particularly important subject.Starting from millimeter-wave communication,this paper focuses on the modeling of passive devices in the millimeter-wave band and the design of low-noise amplifiers and mixers.The basic theory is discussed and simulated.The main work of this article includes:This paper addresses the problem of inaccurate models provided by the silicon-based process library in the millimeter wave band,models passive components.The detailed modeling process of inductance and transformer is elaborated,their formula calculations are analyzed,and simulation is carried out at the end.This paper studies the low-noise amplifier for millimeter-wave communication,designs an improved millimeter-wave low-noise amplifier,and deduces its input matching,gain,and noise linearity,which takes into account the parasitic capacitance of the inductance.The detailed derivation and calculation are carried out.Finally,the above indicators of the low noise amplifier are simulated.The low noise amplifier achieves a gain of 12.8 dB,a noise figure of 3.98 dB and an IIP3(Input third-order intercept point)of-4.4 dBm.This paper studies the mixer for millimeter-wave communication.A new type of mixer capable of generating two-way orthogonal signals is derived.The flicker noise caused by the direct and indirect mechanisms and the white noise is derived from the noise.The formula of the noise coefficient of the mixer is obtained and the linearity formula of the mixer is derived.Simulation results show that the mixer achieves a conversion gain of 9.76 dB,a noise figure of 11.8 dB,and an IIP3 of-6 dBm.This paper designs a new silicon-based millimeter-wave CMOS(Complementary Metal Oxide Semiconductor)receiver front-end,which adopts the cascade of the lownoise amplifier and mixer designed in this paper to provide I/Q(In-phase/Quadrature)dual paths output through the embedded quadrature coupler.The simulation results show that the receiver front-end of this paper achieves good performance in input matching,gain,noise,the linearity and power consumption.Finally,the layout design of the receiving front end is discussed,and the basic design method of the layout is discussed.The proposed silicon-based millimeter-wave receiver front-end does not necessitate power-hungry millimeter-wave quadrature VCO(Voltage Controlled Oscillator)and/or dividers,which thus makes the circuit fairly suitable for phase array receivers of the IF phase shifting and 5G communications.