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Research And Design Of Millimeter-wave Silicon-based CMOS Switching Mixer

Posted on:2016-03-01Degree:MasterType:Thesis
Country:ChinaCandidate:Y ChenFull Text:PDF
GTID:2308330473454318Subject:Circuits and Systems
Abstract/Summary:PDF Full Text Request
With the development and popularization of wireless communication technology, Application of wireless communications has been widely used in various fields, the traditional wireless communication frequency(below 5 GHZ) is quite crowded already, and narrow relative bandwidth, determines the low frequency RF is hard to design highspeed wireless communication. It urged people to explore a higher band of electromagnetic waves. Millimeter-wave communication using millimeter wave band spectrum resource to achieve ultra high speed wireless communications, has became one of research hotspots now. In addition, millimeter wave has a broad application prospect in radar, imaging, medical, astronomy, security and other fields. At the same time, silicon CMOS technology becoming mature, would greatly reduce the cost and replace group III-V process of millimeter wave devices.Therefore, design a high performance silicon CMOS millimeter wave circuit is very important both in explore significance and practical significance.As the millimeter-wave transceiver system, to achieve the basic communication function need to transform baseband signal to radio frequency carrier signal or receiving and demodulation it.And mixer is the important module of millimeter-wave transceiver used to modem. Its position in the receiver decides it has a great influence on the noise of the system, also the conversion gain can provide gain and restrain system noise, its linearity may limit the dynamic range of the whole system. In this paper, the design method of silicon CMOS millimeter wave mixer has carried on, and present a high performance CMOS switching mixer works in 45 GHz.Firstly, in this paper, the basic principle of CMOS millimeter wave mixer, performance parameters, the classification of the mixer, and on-chip passive components are analyzed in detail, and then introduces the mainstream silicon CMOS switching mixer structure. After the necessary deduction, the paper summarizes some methods to improve the performance of switching mixer and the constraint relationship between the performance parameters. Provides effective guidance for the active balanced switching mixer design.Then, the paper summarized modeling and design method of on chip millimeter wave transformer. Analyzed rules need to be awared when using transformer realize impedance transformation and input matching. Reseaching the mothed to embedding the influence of gold line. And the best compromise method has been proposed due to objective circult reasons. Provides an effective solution for matching problem in the mixer.Finally, based on the 90-nm TSMC silicon CMOS technology, using the current injection, inductance matching, and transconductance amplifier technology, This paper designs a double balanced switching mixer works in 45 GHz. Under the driving voltage of 1.2 V to achieve the conversion gain 10.5~13.5dB, noise figure 8.6~9.2dB, input 1dB compression point-12.5dBm, and the power consumption is 9.5 mw. This design provides frequency conversion for the 45 GHz receiver system and exhibits excellent performance.
Keywords/Search Tags:Switching mixer, balun transformer, current injection, millimeter wave, CMOS, transconductance amplifier
PDF Full Text Request
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