Research On 3.1-10.6 GHz Ultra-band Bidirectional Amplifier Design Techniques

As a focus of research,Ultra-wideband(UWB)systems have many advantages such as high location accuracy,low-power consumption,and high-data-rate.As a result,bidirectional amplifiers as a significant part of communication systems focused on achieving an ultra-wideband.This thesis presents a bidirectional amplifier for radiofrequency front-end applications.The bidirectional amplifier achieves an ultra-wideband of 3.1-10.6 GHz with superior performance.This thesis introduces a wideband low noise amplifier with feedback techniques and noise matching techniques.Then a power amplifier based on two order LC wideband matching techniques is introduced.Moreover,a single-pole double-throw switch is designed base on an analysis of switch topologies.The switch achieves the insertion loss lower than 1.2 d B and the isolation less than-20 d B between 3.1-10.6 GHz.After that,this thesis introduces the methods of the bidirectional amplifier design base on the ultra-wideband LNA,ultra-wideband PA,and switch.And the bidirectional amplifier achieves superior performance.For the Rx mode,gain>16 d B,S11<-10 d B,S22<-7.8 d B;NF<2.25 d B at 6.5 GHz,and <2.77 d B at 8.5 GHz;P1d B>8 d Bm,and the high supply current<65m A.In the Tx working mode,the full-band gain is greater than11.8 d B;P1d B>20 d Bm,and the high supply current<192 m A.Rx/Tx modes are controlled by positive voltages.The 3.1-10.6GHz ultra-wideband bidirectional amplifier chip base on 0.5-?m Ga As pHEMT technology achieves a compact layout,and the chip area is less than 1.7 mm×1.7 mm.