Study And Design Of Wideband Amplifier Based On Silicon Technology For Communication And Detection

Driven by the wireless communication and sensing applications,the high speed millimeter-wave(mm Wave)communication,high resolution mm Wave imaging and high security quantum communication are evolving rapidly.However,with the chip blocked,the development of the wireless communication and sensing industry in China is seriously restricted.As the core foundation of the wireless communication and sensing industry,the research of broadband silicon-based amplifier chips is of great significance for China.With above background,using the silicon process,this dissertation focuses on the research and design of silicon-based broadband amplifier for communication and sensing.The main research contents and contributions of this dissertation are summarized as follows:1)The design and implementation of high performance wideband variable gain amplifier(VGA)for the 60 GHz millimeter wave receiver is given.Based on the low cost and high integration advantages of CMOS process,a high performance VGA is designed and implemented with a 65 nm CMOS process.Firstly,to cope with the limited bandwidth issue,an improved Cherry-Hooper structure is adopted as the variable gain cell in the design.To relax the requirement of gain bandwidth product and increase the receiver dynamic range,and the four gain cells are used.Secondly,to solve the issues of group delay,in-band flatness and stability,a series and parallel variable resistor array and zero compensation techniques are adopted,which is analyzed and verified with simulations.Thirdly,to satisfy different bandwidth requirements and keep bandwidth constant,a variable capacitor array is employed to make the bandwidth tuning.Finally,to reduce the DC offset of cascaded system,an efficient dual-negative feedback DC offset canceling circuit is introduced,which is verified with theoretical analysis and Monte Carlo simulations.The measured results show that,the VGA achieves a variable gain range of-4.3?50.8 d B with 1-d B gain step,and a-3d B bandwidth of 0.7?1.9 GHz.Accordingly,the required 880 MHz and 1.76 GHz bandwidth can be satisfied simultaneously.At the maximum gain state,the amplifier noise factor(NF)is lower than 13 d B.Moreover,the amplifier achieves a OP_{1d B} of better than-1 d Bm,a variation of in band group delay of less than50 ps.2)The design and implementation of high performance wideband variable gain amplifier(VGA)for passive mm Wave imaging receiver is presented.Firstly,with a 65 nm CMOS process,a differential transimpedance amplifier with higher common-mode rejection ratio and larger input transconductance is proposed to improve bandwidth and reduce power consumption.Secondly,the MOS variable resistors and variable capacitor arrays are used to achieve reconfigurable gain and bandwidth performance,compensating the PVT issues and being compatible with other receivers.In addition,a novel variable transconductance arrays are introduced to achieve the high-precision 3-d B gain step.Combining with the variable current source array,high-precision 0.5-d B gain step with a step error less than 0.1 d B was finally achieved.In the transconductance stage,an independent neutralization capacitor is employed to increase the bandwidth and keep the bandwidth constant in the gain range.Finally,considering the large input signal,a R-2R attenuator is added in the front end of VGA to increase the VGA dynamic range and further improve the linearity performance.The measured results show that,with a-10?50 d B tuning gain range,a tunable-3d B bandwidth from 1.2 to 3 GHz is achieved.When the gain range is set to 0?60 d B,the tuning-3d B bandwidth is reduced to0.82?2.1 GHz.The bandwidth variation in the whole gain range is less than 10%.In addition,the maximum OP_{1d B} is 4.5 d Bm,the step size error of 0.5-d B gain step is less than 0.1d B,the gain flatness is excellent and the variation of group delay is less than 25 ps,which advances the state-of-the-art results.3)The design and implementation of wideband cryogenic amplifier for superconducting nanowire single photon detector(SNSPD)are presented.Based on an Bi CMOS technology,two low-power wideband cryogenic amplifiers are designed.To cope with the issues of lacking device model in the cryogenic environment,on one hand,according to the variation trend of the known device parameters with temperature,reasonable design margin is reserved in the circuit design.On the other hand,the circuit structure is simplified to increase circuit reliability.The first cryogenic amplifier is designed with a shunt resistor negative-feedback structure.According to the performance of gain,bandwidth,noise and stability,the circuit is optimized with the theoretical analysis and simulations at room temperature.The measured results show that,with a-3d B bandwidth of 120 k Hz?1.3 GHz,at 4.2 K a gain of 20.5 d B is achieved and the power consumption is only 3.1 m W.To further improve the bandwidth performance,the second cryogenic amplifier is implemented using the Cherry-Hooper structure.The measured results show that,with a-3d B bandwidth of 130 k Hz?3.4 GHz,at 4.2 K a gain of 23 d B is achieved and the power consumption is only 4.3 m W.