The Preliminary Research Of Two-dimensional Electronic Materials And Electronic Devices

As traditional silicon-based device continues to shrink,the short-channel effect is getting worse and the Morre's law is failing.In order to further improve device performance,researchers began to find new electronic materials.Two-dimensional?2D?electronic materials stand out and become a strong contender for the next generation of semiconductor materials owing to their unique atomic thickness and excellent gate control.,which have huge application potential in the field of transistors,photodetectors and memories.However,there are still some problems in the actual application of 2D electronic materials and electronic devices,such as regulation of conductive type,broadening of the photoresponse wavelength range,optimization of process,and reliability of device.This article focuses on the issues of regulation of conductive type,broadening of photoresponse wavelength range and reliability of 2D electronic materials and devices.First,changing conductive type and broadening photo-response range of doped MoSe₂ flakes were observed via element doping.The doped V,Fe,Nb atoms into MoSe₂ were successfully synthesized by chemical vapor transport?CVT?method.By the absorption of V or Nb dopants,the intrinsic n-type MoSe₂ was tuned to p-type.A p-n diode based on homojunction with typical rectification was fabricated by stacking the n-type and p-type MoSe₂ vertically.The current ratio at 45 V forward and reverse bias is 340.It shows good rectification performance.The photoresponse range of intrinsic MoSe₂ was only up to 785 nm.However,the photodetector based on the doped MoSe₂flake with V,Fe,Nb can be used to the near-infrared?1550 nm?region at the room temperature.Furthermore,the photoresponse wavelength of a V-doped MoSe₂ could reach up to 10?m.Second,temperature reliability of the graphene memristor was explored.It was demonstrated that the graphene memristor can be set and reset normally from 100 K to570 K.The resistance of low-resistance-state?LRS?was almost not affected by the temperature,and the resistance of high-resistance-state?HRS?increased with the increasing of the temperature.Meanwhile,the set voltage and reset voltage of the memristor were affected very little with changes in temperature.At room temperature,graphene memristor has a good durability and excellent data retention ability.At 500 K high temperature,the high resistance state and low resistance state of graphene memristors both fluctuated greatly owing to the effect of SiO₂ substrate.By preparing and testing graphene memristors with different electrode gaps,the results demonstrated that the set-voltage and reset-voltage of the memristors have no obvious relationship with the electrode gaps.The element doping technology not only modulates the conductive type of two-dimensional materials,but also broadens their photoresponse wavelength.It could also be used in other 2D electronic materials to regulate their physical properties and broaden their applications field.In addition,the exploration of temperature reliability of graphene memristor has laid the root for their practical applications in the future.