Characteristics Of Stacked Memristor Based On Two Dimensional Material GeS

As the fourth basic circuit element,Memristor has been widely used in many fields such as information storage,logic operation,neural network,machine learning,etc.,and has become a research hotspot.The traditional devices have shortcomings such as the distribution of switching voltage is not concentrated enough and the switching speed is slow,which seriously affect the development of memristors.The laminated memristor structure can make the conductive filament more easily form and break at the interface of laminated layers,thus improving the switching characteristics.Therefore,this paper proposes a laminated memristor based on Pt and Cu electrode.At the same time,the two-dimensional material is very thin macroscopically,and GeS has a wide band gap,which is widely used in transistors,especially for the gate control ability.In recent years,researchers have made good achievements in the two-dimensional material memristor.Therefore,in this paper,a stack memristor was prepared based on GeS material,with the electrodes is Pt and Cu.The electrical characteristics of the memristor were studied,and the weight function of the synapse was simulated,and the conduction mechanism was analyzed.The main contents are as follows:Firstly,the typical electrical properties of memristors were obtained by preparing the structures of Cu/GeS/Pt and Cu/Hf_0.5Zr_0.5O₂(HZO)/GeS/Pt.The leakage current of the original Cu/GeS/Cu device is improved by inserting oxide HZO into the device.The lower switching voltage(0.2V and-0.1V)and faster turn on speed(10ns)are obtained,and the high to low resistance ratio can reach 10⁵.The conductance of Cu/HZO/GeS/Pt device is regulated by positive and negative pulse sequences.The simulation of spike timing dependent plasticity(STDP)and paired pulse facility(PPF)based on synaptic weight is explored.The physical mechanism of the function realization of Cu/HZO/ges/Pt device is explored.Secondly,Cu/HZO/GeS/Cu was prepared by using cheap and ductile Cu as the electrode,and excellent memristor device properties were obtained.The positive and negative bidirectional square wave pulse can be applied to the memristor to regulate the conductance and to simulate the weight of biological synapses.The STDP waveform used in this study has exponential attenuation property,which is closer to the biological nerve signal,and has research significance for the future memristor Cu interconnection integration and synaptic simulation.Finally,studied the memrisor based on the IMP logic,with two Cu/HZO/GeS/Pt devices in parallel and resistance in series way building the IMP logic circuit,the experimental results fit the IMP logic truth table,implements the IMP logic can combined operation of computing and storage,compared with the traditional transistor circuit,it reduces the usage of the device,and reduce the power consumption of the computing system.At the same time,the IMP logic is related to the traditional logic gate,which will be helpful to the application of memristor in logic operation.