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Controllable Synthesis And Electrical Properties Of Molybdenum Diselenide Doped With Cobalt

Posted on:2020-09-07Degree:MasterType:Thesis
Country:ChinaCandidate:B J ZhangFull Text:PDF
GTID:2518306464976029Subject:Master of Engineering
Abstract/Summary:PDF Full Text Request
The feature size of the semiconductor chip manufacturing industry continues to shrink and is close to the physical limits of traditional silicon-based materials.Two-dimensional materials have attracted much attention due to their atomic layer thickness.Molybdenum diselenide stands out from the two-dimensional material family due to its unique physical and chemical properties.The modification and application of two-dimensional materials by doping is one of the hot research topics in this field.In this paper,Co-doped Mo Se2 samples were prepared by in-situ co-growth chemical vapor deposition.Optimize the growth process and study mechanism of Colbat doping Mo Se2 were especially necessary due to it is difficult to incorporate elements from VIIB to IIB into the transition metal chalcogenide.In this paper,the amount of reactants,total gas flow rate,and evaporation temperature of Se source were optimized.Then the effects of temperature and hydrogen flow on growth were discussed,and the mechanism affecting the growth process was analyzed.The process parameters were further optimized based on the corresponding growth mechanism.The preparation of 40?m samples was achieved by adjusting the temperature and hydrogen flow rate.The continuous redshift of the A1gpeak and the peak of the PL spectrum Continuous blue shift were observed by increasing the amount of precursor Co3O4;X-ray photoelectron spectroscopy was used to analyze and characterize the element species,elemental valence and elemental composition ratio in Co-doped CoMoSe2 samples;the superconducting quantum interferometer was used to characterize the incorporation of Co makes Mo Se2 change from resistant Magnetic to soft magnetic.The sample of CoMoSe2 prepared by chemical vapor deposition was fabricated into a back gate field effect transistor,and the device was subjected to an electrical property test using a semiconductor parameter analyzer.The results show that the sample after Co-doping is still n-type,compared with the off-state current,the threshold voltage shifts to the positive direction and does not change with the gate voltage.The introduction of cobalt can modulate the bandgap of molybdenum diselenide to the near-infrared range,providing basic data for the application of CoMoSe2 nano-films in optoelectronics.At the same time,the magnetic properties brought by Co incorporation have certain possibilities for the application of two-dimensional molybdenum diselenide in the field of magnetism.
Keywords/Search Tags:molybdenum diselenide, Colbat doped, 2D Material, chemical vapor deposition, in situ co-growth
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