Electronic Properties Of Two-dimensional Material Based Heterostructures And Their Potential As ALD Seed Layers For Depositing Dielectrics

By first-principle calculation, the electrical properties and potential applications of graphene/graphene-like materials based in-plane and layer-stacked heterostructures are investigated, including the electrical properties of fluorographene/graphene and hexagonal boron nitride/graphene in-plane heretrostructures based tunneling field-effect-transistors, the energy-band modulation in graphene/graphene-like materials layer-stacked heterostructures based superlattices, and the potential application of fluorographene/graphene and hexagonal boron nitride/graphene layer-stacked heterostructures as seed layers for deopsiting dielectrics by atomic-layer-deposition. Moreover, we also predict the electrical properties of another promising graphene-like semiconductor material, namely, two-dimansional silicon carbide. The results in this work are expected to give some theoretical support for practical experiments and applications.